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DMN601DWK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
? 20
Unit
V
V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
I D
305
800
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
1
? 10
V
μA
μA
V GS = 0V, I D = 10μA
V DS = 60V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
(Note 8)
V GS(th)
R DS(ON)
|Y fs |
V SD
1.0
?
80
0.5
1.6
?
?
?
?
2.5
2.0
3.0
?
1.4
V
?
ms
V
V DS = 10V, I D = 1mA
V GS = 10V, I D = 0.5A
V GS = 5V, I D = 0.05A
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width ? 10μS, Duty Cycle ? 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601DWK
Document number: DS30656 Rev. 7 - 2
2 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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